bc846aw,bw bc847aw, bw, cw bc848aw, bw, cw npn plastic encapsulate transistor elektronische bauelemente 24-mar-2010 rev. a page 1 of 4 ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? ideally suited for automatic insertion ? for switching and af amplifier applications marking bc846aw=1a;BC846BW=1b; bc847aw=1e;bc847bw=1f;bc847cw=1g; bc848aw=1j;bc848bw=1k;bc848cw=1l absolute maximum ratings ( t a = 25 c unless otherwise noted ) parameter symbol ratings unit collector to base voltage bc846w v cbo 80 v bc847w 50 bc848w 30 collector to emitter voltage bc846w v ceo 65 v bc847w 45 bc848w 30 emitter to base voltage bc846w v ebo 6 v bc847w 6 bc848w 5 collector current - continuous i c 0.1 a collector power dissipation p c 150 mw junction, storage temperature t j , t stg 150, -55 ~ 150 top view a l c b d g h j f k e 1 2 3 1 2 3 sot-323 ref. millimete r ref. millimete r min. max. min. max. a 1.80 2.20 g 0.100 ref. b 1.80 2.45 h 0.525 ref. c 1.15 1.35 j 0.08 0.25 d 0.80 1.10 k - - e 1.20 1.40 l 0.650 typ. f 0.20 0.40 ? base ? emitter ? collector
bc846aw,bw bc847aw, bw, cw bc848aw, bw, cw npn plastic encapsulate transistor elektronische bauelemente 24-mar-2010 rev. a page 2 of 4 electrical characteristics ( tamb = 25 c unless otherwise specified ) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage bc846w v cbo 80 - - v i c = 10 ua, i e = 0 bc847w 50 bc848w 30 collector to emitter breakdown voltage bc846w v ceo 65 - - v i c = 10 ma, i b = 0 bc847w 45 bc848w 30 emitter to base breakdown voltage bc846w v ebo 6 - - v i e = 1 a, i c = 0 bc847w 6 bc848w 5 collector cutoff current i cbo - - 15 na v cb = 30 v collector to emitter saturation voltage v ce(sat) - - 0.25 v i c = 10ma, i b = 0.5 ma - - 0.6 i c = 100ma, i b = 5 ma base to emitter saturation voltage v be(sat) - 0.7 - v i c = 10ma, i b = 0.5 ma - 0.9 - i c = 100ma, i b = 5 ma base to emitter voltage v be(on) 580 660 700 mv v ce = 5 v, i c = 2 ma - - 770 v ce = 5 v, i c = 10 ma dc current gain bc846aw,bc847aw,bc848aw h fe(1) - 90 - v ce = 5 v, i c = 10 a BC846BW,bc847bw,bc848bw 150 bc847cw,bc848cw 270 bc846aw,bc847aw,bc848aw h fe(2) 110 - 220 v ce = 5 v, i c = 2 ma BC846BW,bc847bw,bc848bw 200 450 bc847cw,bc848cw 420 800 transition frequency f t 100 - - mhz v ce = 5 v, i c = 10 ma, f = 100mhz collector output capacitance c ob - - 4.5 pf v cb = 10 v, f=1mhz noise figure bc846aw,bc847aw,bc848aw nf - - - db v ce = 5 v, i c = 0.2 ma, f= 1khz, r s = 2 k ? , bw= 200hz BC846BW,bc847bw,bc848bw 10 bc847cw,bc848cw 4
bc846aw,bw bc847aw, bw, cw bc848aw, bw, cw npn plastic encapsulate transistor elektronische bauelemente 24-mar-2010 rev. a page 3 of 4 characteristic curves
bc846aw,bw bc847aw, bw, cw bc848aw, bw, cw npn plastic encapsulate transistor elektronische bauelemente 24-mar-2010 rev. a page 4 of 4 characteristic curves
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